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M27512
NMOS 512 Kbit (64Kb x 8) UV EPROM
NOT FOR NEW DESIGN
s s s s s
FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
1 28
s s s
DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.
FDIP28W (F)
Figure 1. Logic Diagram
VCC
16 A0-A15
8 Q0-Q7
E GVPP
M27512
VSS
AI00765B
November 2000
This is information on a product still in production but not recommended for new designs.
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M27512
Table 2. Absolute Maximum Ratings
Symbol TA TBIAS TSTG VIO VCC VA9 VPP Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input or Output Voltages Supply Voltage A9 Voltage Program Supply Grade 1 Grade 6 Grade 1 Grade 6 Value 0 to 70 -40 to 85 -10 to 80 -50 to 95 -65 to 125 -0.6 to 6.5 -0.6 to 6.5 -0.6 to 13.5 -0.6 to 14 Unit C C C V V V V
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for ex tended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality document.
Figure 2. DIP Pin Connections
Read Mode The M27512 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, address access time (tAVQV) is equal to the delay from E to output (tELQV). Data is available at the outputs after delay of tGLQV from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-tGLQV. Standby Mode The M27512 has a standby mode which reduces the maximum active power current from 125mA to 40mA. The M27512 is placed in the standby mode by applying a TTL high signal to the E input. When in the standby mode, the outputs are in a high impedance state, independent of the GVPP input. Two Line Output Control Because EPROMs are usually used in larger memory arrays, the product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows : a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur.
A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS
28 1 27 2 26 3 25 4 24 5 23 6 22 7 M27512 21 8 20 9 19 10 18 11 17 12 13 16 14 15
AI00766
VCC A14 A13 A8 A9 A11 GVPP A10 E Q7 Q6 Q5 Q4 Q3
DEVICE OPERATION The six modes of operations of the M27512 are listed in the Operating Modes table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for GVPP and 12V on A9 for Electronic Signature.
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DEVICE OPERATION (cont'd) For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while GVPP should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. System Considerations The power switching characteristics of fast EPROMs require careful decoupling of the devices. The supply current, ICC, has three segments that are of interest to the system designer : the standby current level, the active current level, and transient current peaks that are produced by the falling and rising edges of E. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device at the output. The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling capacitors. It is recommenced that a 1F ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capacitor of low inherent inductance and should be placed as close to the device as possible. In addition, a 4.7F bulk electrolytic capacitor should be used between VCC and VSS for every eight devices. The Table 3. Operating Modes
Mode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature
Note: X = VIH or VIL, VID = 12V 0.5%.
bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. Programming When delivered, and after each erasure, all bits of the M27512 are in the "1" state. Data is introduced by selectively programming "0s" into the desired bit locations. Although only "0s" will be programmed, both "1s" and "0s" can be present in the data word. The only way to change a "0" to a "1" is by ultraviolet light erasure. The M27512 is in the programming mode when GVPP input is at 12.5V and E is at TTL-low. The data to be programmed is applied 8 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. The M27512 can use PRESTO Programming Algorithm that drastically reduces the programming time (typically less than 50 seconds). Nevertheless to achieve compatibility with all programming equipment, the standard Fast Programming Algorithm may also be used. Fast Programming Algorithm Fast Programming Algorithm rapidly programs M27512 EPROMs using an efficient and reliable method suited to the production programming environment. Programming reliability is also ensured as the incremental program margin of each byte is continually monitored to determine when it has been successfully programmed. A flowchart of the M27512 Fast Programming Algorithm is shown in Figure 8.
E VIL VIL VIL Pulse VIH VIH VIH VIL
GVPP VIL VIH VPP VIL VPP X VIL
A9 X X X X X X VID
Q0 - Q7 Data Out Hi-Z Data In Data Out Hi-Z Hi-Z Codes
Table 4. Electronic Signature
Identifier Manufacturer's Code Device Code A0 VIL VIH Q7 0 0 Q6 0 0 Q5 1 0 Q4 0 0 Q3 0 1 Q2 0 1 Q1 0 0 Q0 0 1 Hex Data 20h 0Dh
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M27512
AC MEASUREMENT CONDITIONS
Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages 20ns 0.45V to 2.4V 0.8V to 2.0V
Figure 4. AC Testing Load Circuit
1.3V
1N914
Note that Output Hi-Z is defined as the point where data is no longer driven.
3.3k
Figure 3. AC Testing Input Output Waveforms
DEVICE UNDER TEST
2.0V 0.8V
AI00827
OUT CL = 100pF
2.4V
0.45V
CL includes JIG capacitance
AI00828
Table 5. Capacitance (1) (TA = 25 C, f = 1 MHz )
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 6 12 Unit pF pF
Note: 1. Sampled only, not 100% tested.
Figure 5. Read Mode AC Waveforms
A0-A15 tAVQV E tGLQV G tELQV Q0-Q7
VALID tAXQX
tEHQZ
tGHQZ Hi-Z DATA OUT
AI00735
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M27512
Table 6. Read Mode DC Characteristics (1) (TA = 0 to 70 C or -40 to 85 C; VCC = 5V 5% or 5V 10%; VPP = VCC)
Symbol ILI ILO ICC ICC1 VIL VIH VOL VOH Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 2.1mA IOH = -400A 2.4 Test Condition 0 VIN VCC VOUT = VCC E = VIL, G = VIL E = VIH -0.1 2 Min Max 10 10 125 40 0.8 VCC + 1 0.45 Unit A A mA mA V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 7. Read Mode AC Characteristics (1) (TA = 0 to 70 C or -40 to 85 C; VCC = 5V 5% or 5V 10%; VPP = VCC)
Symbol Alt Parameter Test Condition E = VIL, G = VIL G = VIL E = VIL G = VIL E = VIL E = VIL, G = VIL 0 0 0 M27512 -2, -20 blank, -2 5 -3 Unit
Min Max Min Max Min Max tAVQV tELQV tGLQV tEHQZ tGHQZ
(2) (2)
tACC tCE tOE tDF tDF tOH
Address Valid to Output Valid Chip Enable Low to Output Valid Output Enable Low to Output Valid Chip Enable High to Output Hi-Z Output Enable High to Output Hi-Z Address Transition to Output Transition
200 200 75 55 55 0 0 0
250 250 100 60 60 0 0 0
300 300 120 105 105
ns ns ns ns ns ns
tAXQX
Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Sampled only, not 100% tested.
Table 8. Programming Mode DC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol ILI ICC IPP VIL VIH VOL VOH VID Parameter Input Leakage Current Supply Current Program Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage A9 Voltage IOL = 2.1mA IOH = -400A 2.4 11.5 12.5 E = VIL -0.1 2 Test Condition VIL VIN VIH Min Max 10 150 50 0.8 VCC + 1 0.45 Unit A mA mA V V V V V
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
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M27512
Table 9. MARGIN MODE AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol tA9HVPH tVPHEL tA10HEH tA10LEH tEXA10X tEXVPX tVPXA9X Alt tAS9 tVPS tAS10 tAS10 tAH10 tVPH tAH9 Parameter VA9 High to VPP High VPP High to Chip Enable Low VA10 High to Chip Enable High (Set) VA10 Low to Chip Enable High (Reset) Chip Enable Transition to VA10 Transition Chip Enable Transition to VPP Transition VPP Transition to VA9 Transition Test Condition Min 2 2 1 1 1 2 2 Max Unit s s s s s s s
Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 10. Programming Mode AC Characteristics (1) (TA = 25 C; VCC = 6.25V 0.25V; VPP = 12.75V 0.25V)
Symbol tAVEL tQVEL tVCHEL tVPHEL tVPLVPH tELEH tELEH tEHQX tEHVPX tVPLEL tELQV tEHQZ (4) tEHAX Alt tAS tDS tVCS tOES tPRT tPW tOPW tDH tOEH tVR tDV tDF tAH Parameter Address Valid to Chip Enable Low Input Valid to Chip Enable Low VCC High to Chip Enable Low VPP High to Chip Enable Low VPP Rise Time Chip Enable Program Pulse Width (Initial) Chip Enable Program Pulse Width (Overprogram) Chip Enable High to Input Transition Chip Enable High to VPP Transition VPP Low to Chip Enable Low Chip Enable Low to Output Valid Chip Enable High to Output HiZ Chip Enable High to Address Transition 0 0 Note 2 Note 3 Test Condition Min 2 2 2 2 50 0.95 2.85 2 2 2 1 130 1.05 78.75 Max Unit s s s s ns ms ms s s s s ns ns
Notes. 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. The Initial Program Pulse width tolerance is 1 ms 5%. 3. The length of the Over-program Pulse varies from 2.85 ms to 78.95 ms, depending on the multiplication value of the iteration counter. 4. Sampled only, not 100% tested.
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M27512
Figure 6. MARGIN MODE AC Waveform
VCC
A8
A9 tA9HVPH GVPP tVPHEL E tA10HEH A10 Set tEXA10X tEXVPX tVPXA9X
A10 Reset tA10LEH
AI00736B
Note: A8 High level = 5V; A9 High level = 12V.
Figure 7. Programming and Verify Modes AC Waveforms
A0-A15 tAVEL Q0-Q7 tQVEL VCC tVCHEL GVPP tVPHEL E tELEH PROGRAM DATA IN
VALID tEHAX DATA OUT tEHQX tELQV tEHVPX tEHQZ
tVPLEL
VERIFY
AI00737
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M27512
Figure 8. Fast Programming Flowchart
Figure 9. PRESTO Programming Flowchart
VCC = 6.25V, VPP = 12.75V
VCC = 6V, VPP = 12.5V SET MARGIN MODE n=1 n=0 E = 1ms Pulse NO ++n > 25 YES NO NO VERIFY YES E = 3ms Pulse by n FAIL Last Addr NO FAIL ++ Addr ++n = 25 YES NO VERIFY YES Last Addr NO ++ Addr E = 500s Pulse
YES RESET MARGIN MODE CHECK ALL BYTES VCC = 5V, VPP = 5V
AI00773B
YES CHECK ALL BYTES VCC = 5V, VPP = 5V
AI00774B
DEVICE OPERATION (cont'd) The Fast Programming Algorithm utilizes two different pulse types : initial and overprogram. The duration of the initial E pulse(s) is 1ms, which will then be followed by a longer overprogram pulse of length 3ms by n (n is an iteration counter and is equal to the number of the initial one millisecond pulses applied to a particular M27512 location), before a correct verify occurs. Up to 25 one-millisecond pulses per byte are provided for before the over program pulse is applied. The entire sequence of program pulses is performed at VCC = 6V and GVPP = 12.5V (byte verifications at VCC = 6V and GVPP = VIL). When the Fast Programming cycle has been completed, all bytes should be compared to the original data with VCC = 5V. PRESTO Programming Algorithm PRESTO Programming Algorithm allows to program the whole array with a guaranted margin, in a typical time of less than 50 seconds (to be compared with 283 seconds for the Fast algorithm). This can be achieved with the STMicroelectronics M27512 due to several design innovations described in the next paragraph that improves programming efficiency and brings adequate margin
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for reliability. Before starting the programming the internal MARGIN MODE circuit is set in order to guarantee that each cell is programmed with enough margin. Then a sequence of 500s program pulses are applied to each byte until a correct verify occurs. No overprogram pulses are applied since the verify in MARGIN MODE provides the necessary margin to each programmed cell. Program Inhibit Programming of multiple M27512s in parallel with different data is also easily accomplished. Except for E, all like inputs (including GVPP) of the parallel M27512 may be common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with GVpp and E at VIL. Data should be verified tDV after the falling edge of E.
M27512
Electronic Signature The Electronic Signature mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. This mode is functional in the 25 C 5 C ambient temperature range that is required when programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from VIL to VIH. All other address lines must be held at VIL during Electronic Signature mode, except for A14 and A15 which should be high. Byte 0 (A0 = VIL) represents the manufacturer code and byte 1 (A0 = VIH) the device identifier code. ERASURE OPERATION (applies to UV EPROM) The erasure characteristic of the M27512 is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 A. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the 3000-4000 A range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M27512 in about 3 years, while it would take approximately 1 week to cause erasure when expose to direct sunlight. If the M27512 is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the M27512 window to prevent unintentional erasure. The recommended erasure procedure for the M27512 is exposure to short wave ultraviolet light which has wavelength 2537 A. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The erasure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000 W/cm2 power rating. The M27512 should be placed within 2.5 cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure.
ORDERING INFORMATION SCHEME Example: M27512 -2 F 1
Speed and VCC Tolerance -2 blank -3 -20 -25 200 ns, 5V 5% 250 ns, 5V 5% 300 ns, 5V 5% 200 ns, 5V 10% 250 ns, 5V 10% F
Package FDIP28W
Temperature Range 1 6 0 to 70 C -40 to 85 C
For a list of available options (Speed, VCC Tolerance, Package, etc) refer to the current Memory Shortform catalogue. For fur ther inform ation o n any aspect of this device, please cont act STMicroelectronics Sales Office nearest to you.
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M27512
FDIP28W - 28 pin Ceramic Frit-seal DIP, with window
Symb Typ A A1 A2 B B1 C D E E1 e1 e3 eA L S N 2 7.11 2.54 33.02 15.40 13.05 - - 16.17 3.18 1.52 - 4 8 0.50 3.90 0.40 1.17 0.22 mm Min Max 5.71 1.78 5.08 0.55 1.42 0.31 38.10 15.80 13.36 - - 18.32 4.10 2.49 - 15 0.280 0.100 1.300 0.606 0.514 - - 0.637 0.125 0.060 - 4 28 0.020 0.154 0.016 0.046 0.009 Typ inches Min Max 0.225 0.070 0.200 0.022 0.056 0.012 1.500 0.622 0.526 - - 0.721 0.161 0.098 - 15
A2 A1 B1 B e3 D S
N 1
A L eA C
e1
E1
E
FDIPW-a
Drawing is not to scale
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M27512
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2000 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. www.st.com
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